Co-doped p-type ZnO and nitrogen-rich Zr-N thin films, properties and characterization

　　Title: Co-doped p-type ZnO and nitrogen-rich Zr-N thin films, properties and characterization
　　Author: Sui Yingrui
　　Degree-granting units: Jilin University
　　Keywords: magnetron sputtering;; p-type ZnO thin films;; BN-doped;; PN-doped;; nitrogen-rich Zr-N films;; c-Zr3N4
　　Abstract:
　　Most of the content of this paper consists of two:
　　For the first part of zinc oxide (ZnO) in the presence of the "p-type ZnO Preparation and properties of the" key issues research. Currently, p-type ZnO preparation, there are still high resistivity, low mobility, low carrier concentration, performance, instability and other issues, this Rare earth magnets part of the paper to raise the main use of doping impurities in ZnO solid solubility and reduced acceptor impurity ionization energy of the prepared p-type ZnO.
　　Magnetron sputtering, with high purity of N_2 and O_2 as sputtering gas, ZnO: BN (1at%) as the target, the quartz substrates were out of BN-doped ZnO thin films. Be found after the heat treatment, with increasing temperature, the film conductivity from n-type into p-type, and finally into a weak p-type, in the middle of the annealing temperature 650 ° C, the best performance of the p-type conductivity properties, resistivity, carrier concentration, mobility, respectively 2.3Ωcm, 1.2 × 10 ~ (17), 11 cm ~ 2/Vs, and prepared under the same experimental conditions, resistivity, carrier concentration, mobility, respectively 50Ωcm , 3.6 × 10 ~ (16), 4.4 cm ~ 2/Vs N-doped p-type ZnO compared, p-type conductivity has been improved.
　　Magnetron sputtering technique, discussed and O_2 sputtering in Ar atmosphere, the oxygen flow ratio of the BN-doped ZnO thin films electrical properties of the measurement results show that when the oxygen flow ratio of 70% in the quartz substrate were prepared on the BN-doped ZnO film has the best p-type conductivity properties; studied the annealing atmosphere on Ar/O_2 sputtering atmosphere were prepared under the BN-doped ZnO Thin Films. The results showed that the sample either in vacuum or oxygen atmosphere after annealing have shown p-type conductivity, but the atmosphere in the vacuum of the p-type conductivity after annealing in oxygen atmosphere of nature than the p-type conductivity after annealing nature much better. Vacuum annealing the sample atmosphere mainly from the p-type conductivity by the main contribution to No, and annealed samples in oxygen atmosphere, mainly from the p-type conductivity in zinc vacancy (VZn) by the main contribution.
　　Magnetron sputtering technique, using high-purity gas mixture of Ar and N_2 sputtered ZnO: P_2O_5 (2wt%) target in a PN quartz substrates were doped ZnO thin films; vacuum annealing at 800 ℃, the zinc-rich conditions , to obtain the resistivity, carrier concentration and mobility were 3.98Ωcm, 2.18 × 10 ~ (18) cm ~ (-3), 1.35 cm ~ 2/Vs the PN co-doped p-type ZnO films with the same prepared under experimental conditions, the P N single-doped single-blending p-type ZnO thin film compared to, p-type conductivity has been improved. Through experimental results, we conclude that the PN-doped p-type ZnO valence band edge to form a neutral passive (PZn-3No) complex formation was completely occupied with impurities, resulting in smaller band gap width, the composite No extra body and by the Lord as to the N atom to form a stable structure of P_ (Zn)-4N_o complex, p-type conductivity mainly from the P_ (Zn)-4N_o complex by the main contribution. Verify the theoretical calculations are correct.
　　The second part of the spinel structure for Th3P4 and metal nitride new superhard materials, preparation and performance of research work. Zr-N nitrogen-rich compounds in ambient temperature and pressure are usually thermodynamically metastable phase, and synthetic difficulties, but the research both in theory and experiment are important. Theoretical calculations show that Th3P4 structure Zr_3N_4 (c-Zr_3N_4) semiconductor thin film is a new superhard materials, machinery, electronics, optics and other fields has important applications, preparation of c-Zr_3N_4 film developed new methods and techniques are necessary of. This part of the paper using magnetron sputtering technique at atmospheric pressure nitrogen-rich preparation of Zr-N films.
　　Magnetron sputtering technique, using high purity Ar and N_2 as a sputtering gas, metal Zr as sputtering targets, substrate temperature of 500 ℃, on Si substrate prepared by the rock salt structure of the ZrN (γ-ZrN ) phase and c-Zr_3N_4 phase composition of the nitrogen-rich Zr-N films; studied N_2 / (N_2 + Ar) flow ratio (RN_2) Zr-N films on the structure of performance. The results showed that with RN_2 increases, γ-ZrN phase of steady decline in the relative levels, c-Zr_3N_4 increasing the relative content of phase, Zr-N film experience from the γ-ZrN phase to the c-Zr_3N_4 phase transition, experiencing from conductor to semiconductor transition. Sputtering in pure nitrogen, the substrate temperature of 100 ℃, the glass substrate, in situ 400 ℃ under nitrogen atmosphere after http://www.chinamagnets.biz/ annealing have prepared single phase c-Zr_3N_4 film. First experimental proof of c-Zr_3N_4 is a p-type semiconductor, band gap of 2.8 eV. At room temperature and atmospheric pressure synthesis of c-Zr_3N_4 film is mainly a non-equilibrium thin film growth process and the lattice mismatch and thermal mismatch generated by the result of tensile stress.
　　Degree Year: 2010