Europium-doped silicon-rich silicon oxide thin film optical properties

Title: Europium-doped silicon-rich silicon oxide thin film optical propertiesAuthor: Zhang WuDegree-granting unit: Zhejiang UniversityKeywords: photoluminescence;; acid Eu;; silica;; heat treatment;; electroluminescentSummary:Silicon-based light source is an important component of silicon-based optoelectronics, silicon photonics is the most important issue facing the development of one, but because of the crystal
Indirect band gap of silicon, which makes it Neodymium Magnets not suitable for optical active devices. Rare earth ions, because of its high fluorescence intensity, color is good, performance
Stability characteristics of widespread concern. Thus silicon light-emitting rare-earth silicon-based optoelectronic devices may be required for the light source. In this paper, Eu-doped
Silicon-rich silicon oxide thin film optical and electrical properties studies, to explore as a means of silicon-based light source.Europium-doped silicon-rich silicon oxide thin
Film by electron beam evaporation (EBE) for preparation of europium doping dose is the dose evaporation source for doping control. Through the thin-film
Preparation conditions and subsequent heat treatment process and luminescence (PL) relationship between a detailed study into the MOS devices and thin films, to achieve its power
EL and explored to improve the way electroluminescence intensity, we draw the following conclusions:First, by electron beam evaporation method, the system can
Equipment to be dense europium-doped silicon-rich silicon oxide film. By controlling the europium-doped silicon-rich silicon oxide thin film deposition process the substrate temperature, we find
As the film deposition substrate temperature, the PL native film gradually weakened, while the PL intensity of the film after heat treatment gradually.Second
Found in the thin film deposition process, http://www.everbeenmagnet.com/en/products/110-sintered-neodymium-magnets Eu valence state occurred Eu ~ (3)-Eu ~ (2) changes. Eu in the evaporation source to Eu ~ (3) exist in
Thin films deposited most of the native Eu ~ (2). This is due to deposition on the SiO substrate by capturing Eu_2O_3 the O atoms, into
SiO_2, while Eu itself was reduced to Eu ~ (2).Third, when the heat treatment temperature is below 800 ℃, the europium-doped silicon-rich silicon oxide thin film PL
Integrated intensity with increasing annealing temperature gradually decreased, and when the heat treatment at temperature higher than 800 ℃, PL integrated intensity with increasing annealing temperature
Gradually increased. Samples of the integrated intensity at 1100 ℃ is almost 11 times the sample without heat treatment for 72 times at 800 ℃. This fluorescence enhancement is
As the film microstructure during heat treatment caused the change, and accompanied by changes in the fluorescence mechanism. The heat treatment temperature is fixed to a strong PL
The strongest degree of 1100 ℃, the PL intensity of the changes in the relationship with the heat treatment time, less than 90 min, at the time, PL intensity with annealing time extension
Long, gradually increased, and then when the time is extended, PL integrated intensity is essentially the same. And then by fluorescence lifetime testing, we found that with the heat treatment temperature
Degree increases, the fluorescence lifetime at 800 ℃ for rendering a clear to us by the ns-level process of change. Corresponding to the oxidation state of silicon bulk defects
Luminescence and Eu ~ (2) of the 4f ~ 65d-4f ~ 7 (~ 8S_ (7 / 2)) level transition, and further experimental validation of the design after 800 ℃ higher than the strong broadband
Luminescence from the Eu ~ (2), then we TEM, SAED, XRD microstructure of the films were characterized and found that the heat treatment temperature as the film
Higher degree, EuSiO_3 polycrystalline clusters formed in the film crystallinity continues to increase. Therefore, we believe that the fluorescence mechanism of heat transfer process
Changed by changes in film microstructure.Fourth, we will europium-doped silicon-rich silicon oxide films produced ITO / EuSiO / P-Si / Al MOS
Device structure, a successful film electroluminescence. But the device is relatively large injection current, we believe that the formation of larger conventional heat treatment
EuSiO_3 particles, injected electrons through the conduction between the particles, when faced with defect recombination centers, the electron-hole pair radiative recombination occurs, and the emission
Visible light. We focused on this structure has been improved, with p / p ~ substrate instead of p-type substrate, the substrate and the electrode to make ohmic contact formation; mining
RTP replaced with conventional heat treatment, to form smaller and more uniform particle clusters; by adding Eu SiO_2 film silicon-oxygen layer, to achieve the increased electric field,
Reduce the injection current purposes. Compared with no added SiO_2 electroluminescent devices, at a lower injection current and bias can be achieved Eu ~ (2)
The 4f ~ 65d-4f ~ 7 level transition and issued a stronger electroluminescence.Degree Year: 2010